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| savantic semiconductor product specification silicon npn power transistors 2SC4941 d escription with to-3pml package switching power transistor high breakdown voltage pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 7 v i c collector current 6 a i cm collector current-peak 12 a i b base current 3 a i b base current-peak 6 a p t total power dissipation t c =25 65 w t j junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 1.92 /w fig.1 simplified outline (to-3pml) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC4941 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a ;i b =0 800 v v cbo collector-base voltage i c =1ma ;i e =0 1500 v v cesat collector-emitter saturation voltage i c =3a ;i b =0.6a 0.5 v v besat base-emitter saturation voltage i c =3a; i b =0.6a 1.5 v i cbo collector cut-off current v cb =1200v; i e =0 100 a i ceo collector cut-off current v ce =ratedv ceo ; i b =0 100 a i ebo emitter cut-off current v eb =ratedv ebo ; i c =0 100 a h fe-1 dc current gain i c =1a ; v ce =5v 15 h fe-2 dc current gain i c =1ma ; v ce =5v 7 f t transition frequency i c =0.6a ; v ce =10v 8 mhz switching times t on turn-on time 0.5 s t s storage time 3.5 s t f fall time i c =3a i b1 =0.6a; i b2 =-1.2a v bb2 =4v r l =85 c 0.3 s savantic semiconductor product specification 3 silicon npn power transistors 2SC4941 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) |
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